| 摘要 |
The performance of a scanning electron microscope (SEM) ( 10 ) is determined by scanning, with this SEM, porous silicon surface areas (PS<SUB>F</SUB>, PS<SUB>C</SUB>) each having a different average pore size, calculating the Fourier transform spectra (F<SUB>c</SUB>) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).
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