| 发明名称 |
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR USING HYPERPURE AMMONIA |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor using hyperpure ammonia suitable for the nitrogen source for the nitride semiconductor. <P>SOLUTION: The nitride semiconductor is manufactured with the hyperpure ammonia as a raw material obtained through distillation by decreasing the impurity having a peak absorption wavelength of 1310 cm<SP>-1</SP>, 1320 cm<SP>-1</SP>, and 1330 cm<SP>-1</SP>determined by the gas analysis which uses Fourier transformation infrared spectroscopy (FT-IR). <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004104089(A) |
申请公布日期 |
2004.04.02 |
| 申请号 |
JP20030186630 |
申请日期 |
2003.06.30 |
| 申请人 |
SHARP CORP |
发明人 |
UEDA YOSHIHIRO;TAKAKURA TERUYOSHI;YUASA TAKAYUKI;KOURA TERUMASA;NAKAMURA MASAKAZU;MATSUSHIGE HARUHIKO |
| 分类号 |
H01L21/205;H01L33/32;H01S5/323 |
主分类号 |
H01L21/205 |
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