| 摘要 |
Methods of forming DRAM arrays are described. According to one aspect of the invention, a plurality of continuous active areas are formed relative to a semiconductive substrate. A plurality of word lines and active area isolation lines are formed over the continuous active areas. An insulative layer is formed over the word lines and active area isolation lines and in a common masking step, both capacitor contact openings and bit line contact openings are patterned over the insulative layer. Subsequently, capacitor contact openings and bit line contact openings are etched through the insulative layer over the continuous active area, and may be contemporaneously patterned and etched. Subsequently, conductive material is formed within the openings to provide conductive plugs. Capacitors and bit lines are then formed to be in electrical communication with the respective conductive plugs.
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