| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor device capable of enhancing light-emitting efficiency by reducing light absorbing loss in a contact layer. <P>SOLUTION: This nitride based semiconductor device comprises an n-type contact layer 4 formed on a sapphire substrate 1, an MQW active layer 5 formed on the n-type contact layer 4 and composed of a nitride-based semiconductor layer, a p-type clad layer 7 formed on the MQW active layer 5, an un-doped contact layer 8 formed on the p-type clad layer 7 and a p-side electrode 9 formed on the un-doped contact layer 8. <P>COPYRIGHT: (C)2004,JPO |
