发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
The semiconductor device includes a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; an insulation film covering a top of the MOSFET and having a through-hole opened on one of the impurity diffused regions formed in; and a capacitor formed at at least a part of an inside of the through-hole, the through-hole having a larger diameter inside than at a surface thereof or having a larger diameter at an intermediate part between the surface thereof and a bottom thereof than the surface and the bottom thereof.
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申请公布号 |
US6730574(B2) |
申请公布日期 |
2004.05.04 |
申请号 |
US20010975510 |
申请日期 |
2001.10.12 |
申请人 |
FUJITSU LIMITED |
发明人 |
EMA TAIJI;ANEZAKI TOHRU;MITANI JUNICHI |
分类号 |
H01L21/8242;(IPC1-7):H01L21/20;H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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