METHOD FOR FORMING GATE INSULATING LAYER

摘要

PURPOSE: A method for forming a gate insulating layer is provided to restrain the formation of SiOx on a silicon substrate by using a dual gate insulating layer of an AlON layer and an Y2O3 layer. CONSTITUTION: An AlON layer is formed on a silicon substrate(1). A crystallized AlON layer(3c) is formed by sequentially performing N2O plasma annealing and N2 annealing. An Y2O3 layer is formed on the crystallized AlON layer. By performing vacuum annealing, a crystallized Y2O3 layer(5a) is formed. The dual structure of AlON layer and Y2O3 layer is used as a gate insulating layer(6).