| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of preventing attack of an oxide spacer due to wet chemicals when using a dual spacer. CONSTITUTION: A plurality of gate lines are formed on a semiconductor substrate(21). An oxide spacer(27) is formed at both sidewalls of the gate lines, wherein the height of the oxide spacer is lower than that of the gate line. An etch barrier layer and an interlayer dielectric(29) are sequentially formed on the resultant structure. A contact hole(31) is formed by SAE(Self Aligned Etching) of the interlayer dielectric. By etching the etch barrier layer exposed in the contact hole, a nitride spacer(32) is formed at the sidewalls of the gate line. Then, a contact plug is formed in the contact hole.
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