发明名称 Method of reading stored data and semiconductor memory device
摘要 A semiconductor memory device includes a smaller number of elements. A method for reading stored data within the semiconductor memory device suppresses the reduction in the static noise margin accompanying a voltage drop of a power supply voltage, and improves the degree of integration of the circuit.
申请公布号 US6738283(B2) 申请公布日期 2004.05.18
申请号 US20020104024 申请日期 2002.03.25
申请人 SONY CORPORATION 发明人 KASAI GEN;FURUMI KOJI
分类号 G11C11/418;G11C7/22;G11C11/41;G11C11/412;G11C11/419;G11C15/04;H01L21/8244;H01L27/11;(IPC1-7):G11C11/00 主分类号 G11C11/418
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