发明名称 Method of manufacturing a ferroelectric thin film
摘要 The invention provides a method for forming a ferroelectric thin film that is uniform and good in crystallinity. The method includes applying a liquid to a surface of a substrate. The liquid includes ultra-fine particle powder comprising at least one element constituting the ferroelectric thin film to a surface of a substrate. The liquid applied to the surface of substrate is then baked.
申请公布号 US6740532(B2) 申请公布日期 2004.05.25
申请号 US20020218988 申请日期 2002.08.13
申请人 ROHM CO., LTD. 发明人 FUJIMORI YOSHIKAZU
分类号 C23C14/58;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/00 主分类号 C23C14/58
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