发明名称 |
MAGNETORESISTANCE EFFECT ELEMENT, MAGETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND THEIR MANUFACTURING METHOD |
摘要 |
In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time. |
申请公布号 |
KR20040044547(A) |
申请公布日期 |
2004.05.28 |
申请号 |
KR20047005268 |
申请日期 |
2002.10.11 |
申请人 |
|
发明人 |
|
分类号 |
G11C11/15;G01R33/09;G11B5/39;G11C11/16;H01F10/32;H01F41/18;H01F41/30;H01L21/8246;H01L27/22;H01L43/10;H01L43/12 |
主分类号 |
G11C11/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|