| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which enables fining and high integration of a unit cell. <P>SOLUTION: A vertical transistor has a semiconductor substrate, a semiconductor layer formed on the semiconductor substrate and a plurality of unit cells which are disposed and formed in the semiconductor layer, have a stripe-like gate electrode, a source layer and a drain layer each and has a gate wiring line mutually connecting each gate electrode. Furthermore, the transistor has a first main electrode formed on an insulating film covering the gate electrode and the gate wiring line and being in contact with any one among the source layer and the drain layer of each unit cell; an impurity diffusion layer formed to a depth reaching the semiconductor substrate at a part immediately below the gate wiring line of the semiconductor layer for drawing the other of the source or the drain layers of each unit cell up to the semiconductor substrate; and a second main electrode formed at the back surface of the semiconductor substrate. <P>COPYRIGHT: (C)2004,JPO |
