发明名称 ION IMPLANTATION APPARATUS FOR BEAM TRAP
摘要 PURPOSE: An ion implantation apparatus for beam trap is provided to be capable of detecting the damage of a beam trap part. CONSTITUTION: An ion implantation apparatus for beam trap is provided with an ion source part(100) for generating ion beam, an analyzer(110) connected with the ion source part for sorting the ion beam, a beam focusing part(120) connected with the analyzer, a deflector(130) connected with the beam focusing part for carrying out an X-axis direction scanning process, and a beam trap part(140) for filtering unwanted ion beam out of the ion beam passed through the deflector. The ion implantation apparatus for beam trap further includes a lens part(160) connected with the deflector for changing the angle of the ion beam as much as 90 degree, an accel column part(170) connected with the lens part for controlling ion implanting depth by accelerating the ion beam, and a detecting part(150) for detecting the ions moving to the lens part due to the damage of the beam trap part.
申请公布号 KR20040051222(A) 申请公布日期 2004.06.18
申请号 KR20020079115 申请日期 2002.12.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SU MAN
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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