| 摘要 |
The semiconductor device includes a semiconductor substrate and, in an element isolating region in the semiconductor substrate, a first active area A/A dummy pattern and a second A/A dummy pattern having a pitch smaller than that of the first A/A dummy pattern. Placement of the first A/A dummy pattern and placement of the second A/A dummy pattern are carried out in separate steps. The semiconductor substrate may be divided into a plurality of mesh regions, and a dummy pattern may be placed in each mesh region according to an area of the mesh region being occupied by an element pattern located therein.
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