| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting device which can effectively form a current diffusion layer. <P>SOLUTION: In manufacturing a light emitting device 100, a light emitting layer 24 and a current diffusion layer 7 which are composed of III-V compound semiconductor respectively, are formed on a single crystal substrate 1. The light emitting layer 24 is formed by a metal organic vapor phase epitaxy process, and the p-type current diffusion layer 7 is formed on the light emitting layer 24 by a hydride vapor phase epitaxy process. In addition, a highly doped doping layer 8 is formed in the surface layer part of the electron diffusion layer 7 including the main surface on which an electrode 9 is formed, the concentration of the p-type dopant of the surface layer part being designed higher than that of the remainder part of the electron diffusion layer 7. <P>COPYRIGHT: (C)2004,JPO |
