| 摘要 |
<P>PROBLEM TO BE SOLVED: To accommodate a circuit inside a metal case, etc. connected to a terminal on a low voltage side, thereby reducing a parasitic inductance to form the entire compact device. <P>SOLUTION: In a bottom part 2A of a metal case 2, laminated metal plates 5, 7 are laminated through a base metal plate 4, insulating materials 5A, 7A, etc., and on its surface side, MOSFETs 9, 10 constituting an inverter circuit 20 are mounted. Further, the metal case 2 is provided with a low voltage terminal 3 connected to the low voltage side of a power source 19, and the laminated metal plate 5 is connected to a high voltage terminal 6 connected to a high voltage side of the power source 19, and also the laminated metal plate 7 is connected to an output terminal 8 which outputs an alternating current. Thus, an area of a current path on the low voltage side can be increased by using the metal case 2 to reduce the parasitic inductance, and the MOSFET can be protected from a surge voltage, etc., and also it is possible to form the thin device with the high radiation heat property. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
