| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve etch margin by forming a nitride layer with rapid etching speed at the lower of a metal film. CONSTITUTION: An IMD(Inter-Metal Dielectric)(12) is formed on a substrate(11). A nitride layer(13a) is formed on the IMD. A metal film(14a), an anti-reflective coating layer(15a) and a hare mask are sequentially stacked on the nitride layer. By patterning the stacked structure, a lower metal interconnection is formed. An interlayer dielectric(18) with a via hole is formed on the resultant structure. An upper metal interconnection(20) is formed to connect the lower metal interconnection through the via hole.
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