| 发明名称 | Method for fabricating semiconductor apparatus | ||
| 摘要 | A method for fabricating a semiconductor apparatus includes forming a diffusion barrier film on a semiconductor substrate, forming a first film on a semiconductor substrate including a common source region, forming a second film on the first film, forming a conductive film on the second film, patterning the conductive film and the second film, to form an active pattern, and patterning the first film and the semiconductor substrate using the active pattern as a mask, to form a pillar; and forming a gate electrode on an outer circumference of the pillar. | ||
| 申请公布号 | US9484390(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514839409 | 申请日期 | 2015.08.28 |
| 申请人 | SK Hynix Inc. | 发明人 | Park Hae Chan |
| 分类号 | H01L21/425;H01L21/38;H01L27/24;H01L29/66;H01L45/00;H01L29/423;H01L29/08;H01L21/02;H01L21/3213;H01L21/04;H01L27/10 | 主分类号 | H01L21/425 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a semiconductor apparatus, the method comprising: forming a first film on a semiconductor substrate including a common source region; forming a second film on the first film; forming a conductive film on the second film; patterning the conductive film and the second film, to form an active pattern; and patterning the first film and the semiconductor substrate using the active pattern as a mask, to form a pillar; and forming a gate electrode on an outer circumference of the pillar, wherein the first film includes an undoped polysilicon film and the second film includes a doped polysilicon film. | ||
| 地址 | Gyeonggi-do KR | ||