发明名称 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component
摘要 A semiconductor component includes a semiconductor body of a first conductivity type which accommodates a space charge region. Semiconductor regions of a second conductivity type are disposed in at least one plane extending essentially perpendicularly to a connecting line extending between two electrodes. A cell array is disposed under one of the electrodes in the semiconductor body. At least some of the semiconductor regions of the second conductivity type are connected to the cell array via filiform semiconductor zones of the second conductivity type in order to expedite switching processes. A method for fabricating such a semiconductor component is also provided.
申请公布号 US6762455(B2) 申请公布日期 2004.07.13
申请号 US20020095270 申请日期 2002.03.11
申请人 INFINEON TECHNOLOGIES AG 发明人 OPPERMANN KLAUS-GUENTER;TIHANYI JENOE
分类号 H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/76 主分类号 H01L21/336
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