| 发明名称 |
Method for producing semiconductor device |
| 摘要 |
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.
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| 申请公布号 |
US6765229(B2) |
申请公布日期 |
2004.07.20 |
| 申请号 |
US20010985394 |
申请日期 |
2001.11.02 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB |
发明人 |
ZHANG HONGYONG;TAKEMURA YASUHIKO;TAKAYAMA TORU |
| 分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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