发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS OPERATION METHOD, ESPECIALLY PREVENTING PEAK CURRENT IN AN ON-STATE AND AN OFF-STATE
摘要 PURPOSE: A semiconductor integrated circuit device and its operation method are provided to prevent the generation of a peak current in an on-state and an off-state and to reduce current consumption in an inactive state, as assuring operation speed. CONSTITUTION: The semiconductor integrated circuit device includes several memory cells, and the first circuit block comprising several MOSFETs and the second circuit block comprising several MOSFETs. The first circuit reduces a subthreshold leak current of the MOSFETs of the first circuit block. The second circuit reduces a subthreshold leak current of the MOSFETs of the second circuit block. The first circuit includes the first port connected to the first circuit block, and it includes the second port receiving the first voltage, and also includes the first switch(QP1) reducing the subthreshold leak current. The second circuit includes the third port connected to the second circuit block, the fourth port receiving the first voltage, and the second switch(QP2) reducing the subthreshold leak current. The first switch is controlled by the first control signal, and the second switch is controlled by the second control signal.
申请公布号 KR100443101(B1) 申请公布日期 2004.07.26
申请号 KR20010080456 申请日期 2001.12.18
申请人 HITACHI, LTD. 发明人 NODA HIROMASA;AOKI MASAKAZU;IDEI YOUJI;KAJIGAYA KAZUHIKO;NAGASHIMA OSAMU;ITOH KIYOO;HORIGUCHI MASASHI;SAKATA TAKESHI
分类号 G11C11/407;G11C5/14;G11C11/4074;H03K19/00;(IPC1-7):G11C11/407 主分类号 G11C11/407
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