| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element exhibiting excellent adhesion to an n-type oxide semiconductor layer and provided with a low resistance ohmic electrode. <P>SOLUTION: In the oxide semiconductor light emitting element 1 comprising a growth layer of an n-type ZnO contact layer 3 (n-type oxide semiconductor layer), an n-type clad layer 4, a light emitting layer 5, a p-type clad layer 6, and a p-type contact layer 7 formed on a sapphire substrate 2 (substrate), an n-type ohmic electrode 10 composed of an oxide of a transition metal not containing Ni, Cu and Ag is provided on the n-type ZnO contact layer 3 exposed by etching the growth layer partially. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
