| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an art whereby the crack of a semiconductor wafer can be prevented in a single wafer RTP apparatus. <P>SOLUTION: In the temperature-rising process of a semiconductor wafer having a temperature not higher than 500 °C, even though its bend occurs, an open-loop control is so performed as to reduce relatively its rotating speed to a speed not higher than 100 rpm. Consequently, the centrifugal force applied to the semiconductor wafer is so reduced as to prevent it from being pulled out from the stage of a single wafer RTP apparatus. Also, in the temperature-rising process of the semiconductor wafer having a temperature exceeding 500 °C and in its main-processing process, a closed-loop control is so performed as to further increase relatively its rotating speed. The nearly uniform intra-surface temperature of the semiconductor wafer is so obtained as to prevent its bend. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
