发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having high and stable electric characteristics even though a structure is fine; or achieve high performance and high reliability even in a semiconductor device including the transistor.SOLUTION: A semiconductor device has on a substrate, a conductor, an oxide semiconductor and an insulator. The oxide semiconductor has a first region and a second region, in which the second region has resistance lower than that of the first region and a whole area of the oxide semiconductor to be the first region is surrounded by the conductor via the insulator.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016189464(A) |
申请公布日期 |
2016.11.04 |
申请号 |
JP20160061152 |
申请日期 |
2016.03.25 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;ENDO YUTA;TSUKAMOTO YOKO |
分类号 |
H01L29/786;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L27/105;H01L27/108;H01L27/115;H01L27/146;H01L29/423;H01L29/49;H01L29/788;H01L29/792 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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