发明名称 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a transistor having high and stable electric characteristics even though a structure is fine; or achieve high performance and high reliability even in a semiconductor device including the transistor.SOLUTION: A semiconductor device has on a substrate, a conductor, an oxide semiconductor and an insulator. The oxide semiconductor has a first region and a second region, in which the second region has resistance lower than that of the first region and a whole area of the oxide semiconductor to be the first region is surrounded by the conductor via the insulator.SELECTED DRAWING: Figure 1
申请公布号 JP2016189464(A) 申请公布日期 2016.11.04
申请号 JP20160061152 申请日期 2016.03.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;ENDO YUTA;TSUKAMOTO YOKO
分类号 H01L29/786;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L27/105;H01L27/108;H01L27/115;H01L27/146;H01L29/423;H01L29/49;H01L29/788;H01L29/792 主分类号 H01L29/786
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