Semiconductor device and nonvolatile semiconductor memory device comprising a plurality of semiconductor elements as well as process for the same

摘要

A semiconductor device of which the process is simplified so that the manufacturing cost can be reduced and, at the same time, which has a semiconductor element that can control a current of high voltage is provided. The semiconductor device includes first and second semiconductor elements and the first semiconductor element includes a lower electrode formed above a substrate, an intermediate insulating film formed on the lower electrode and an upper electrode formed on the insulating film. The second semiconductor element includes a gate insulating film, which is formed on the substrate and which includes the same layer as that of the intermediate insulating film, and a gate electrode formed on the gate insulating film.