METHOD FOR FORMING VIA HOLE OF SEMICONDUCTOR DEVICE TO PREVENT ATTACK OF LOWER METAL LINE

摘要

PURPOSE: A method for forming a via hole of a semiconductor device is provided to prevent an attack of a lower metal line by improving a process for forming the via-hole. CONSTITUTION: A lower metal line(12), the first interlayer dielectric(14), an upper metal line(16), and an anti-reflective layer(18) are sequentially laminated on a semiconductor substrate(10). The upper metal line is etched. A nitride layer is laminated on the resultant structure. The second interlayer dielectric(22) is laminated thereon. A photoresist layer(24) is formed on the interlayer dielectric. An open part is formed by performing an exposure process. The first via hole is formed by etching the second interlayer dielectric. A lateral part of the upper metal line is opened by etching the nitride layer.