Ohmic contact plug having an improved crack free TiN barrier metal in a contact hole and method of forming the same

摘要

A sputtering method of depositing a titanium nitride film on a titanium film in contact with a silicon at a bottom of a contact hole is provided, wherein the sputtering method is carried out at a temperature of the silicon region of not less than 450° C., so that the titanium nitride film has a compressive stress of not higher than 5x10<9 >dyne/cm<2 >whereby the titanium film has such a high stability as preventing any crack upon changing the compressive stress to a tensile stress by a heat treatment.