| 发明名称 |
Method for fabricating a semiconductor device |
| 摘要 |
There is provided a method of fabricating a semiconductor device whereby fine patterns are formed with high dimensional accuracy by means of multiple exposures, using a phase shift mask and a trim mask. Phases are periodically assigned to shifter patterns within a given range from patterns generated with the phase shift mask, respectively.
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| 申请公布号 |
US6787459(B2) |
申请公布日期 |
2004.09.07 |
| 申请号 |
US20020294700 |
申请日期 |
2002.11.15 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MONIWA AKEMI;HAGIWARA TAKUYA;KATABUCHI KEITARO;FUKUDA HIROSHI;ADACHI MINEKO |
| 分类号 |
G03F1/08;G03F1/00;G03F1/14;G03F1/30;G03F1/36;G03F1/68;G03F1/70;G03F1/84;G03F7/20;H01L21/027;H01L21/82;(IPC1-7):H01C21/44;G06F17/50;G03F9/00 |
主分类号 |
G03F1/08 |
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