| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize an active matrix panel in which pitches of unit cells on a drive circuit side are made narrow by optimizing arrangement of thin film transistors of a shift register. <P>SOLUTION: In a source line drive circuit 40 for the active matrix panel, TFTs constituting clocked inverters 3a and 4a of the unit shift register A1 of the drive circuit 40 are formed in thin film transistor formation areas 300a to 300d, where one-end sides of thin film transistor formation areas formed with thin film transistors of different conductivity types are close to each other and the other-end sides are positioned in mutually opposite directions. Consequently, thin film transistors are unevenly distributed for each conductivity type and the formation pitch P2 of unit shift registers is made narrow. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
