发明名称 CHEMICALLY AMPLIFIED RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition having excellent filtration properties and enabling the number of defects on a silicon wafer to be remarkably reduced, and to provide a method for manufacturing the resin composition for a resist. <P>SOLUTION: [1] The chemically amplified resist composition contains a treated resin (1) obtained by bringing a crude resin (1) into contact with activated carbon, an acid generator and a solvent, wherein the resin (1) is (a) a (meth)acrylic resin which is insoluble or slightly soluble in an aqueous alkali solution, is made soluble in the aqueous alkali solution by the action of an acid, and contains a repeating unit having an alicyclic hydrocarbon group in a side chain, or (b) a styrenic resin which is insoluble or slightly soluble in an aqueous alkali solution, is made soluble in the aqueous alkali solution by the action of an acid, and contains a repeating unit derived from hydroxystyrene. [2] The method for manufacturing the chemically amplified resist composition includes a step in which the treated resin (1) is obtained by bringing the crude resin (1) into contact with activated carbon and the treated resin (1), acid generator and organic solvent are mixed. Since the chemically amplified resist composition has excellent filtration properties and enables the number of defects on a silicon wafer to be reduced when used as a resist, it is suitable for use in excimer laser lithography with ArF or KrF for semiconductor production. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004326092(A) 申请公布日期 2004.11.18
申请号 JP20040091365 申请日期 2004.03.26
申请人 SUMITOMO CHEM CO LTD 发明人 HANAMOTO YUKIO;KUWANA KOJI;YAMAMOTO SATOSHI
分类号 G03F7/039;G03F7/027;G03F7/033;H01L21/027 主分类号 G03F7/039
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