| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting diode and a method for manufacturing the same. <P>SOLUTION: The semiconductor light emitting diode includes a substrate and an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-type electrode having a first metal layer formed on the p-type semiconductor layer and a second metal layer formed on the first metal layer and reflecting light generated by the active layer, which are formed on the substrate in this order. The semiconductor light emitting diode can reduce the operation voltage and improve the light extraction efficiency by comprising the p-type electrode having a low contact resistance with the p-type semiconductor layer and a high light reflectance. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
