发明名称 |
Antifuse structure and method of use |
摘要 |
An antifuse structure and method of use are disclosed. According to one embodiment of the present invention a first programming voltage is coupled to a well of a first conductivity type in a substrate of a second conductivity type in an antifuse. A second programming voltage is coupled to a conductive terminal of the second conductivity type in the antifuse to create a current path through an insulator between the conductive terminal and the well to program the antifuse. The first programming voltage may be coupled to an ohmic contact in the well in the antifuse.
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申请公布号 |
US6836000(B1) |
申请公布日期 |
2004.12.28 |
申请号 |
US20000515760 |
申请日期 |
2000.03.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MARR KENNETH W.;BATRA SHUBNEESH |
分类号 |
H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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