发明名称 |
Semiconductor device for protecting electrostatic discharge and method of fabricating the same |
摘要 |
In a semiconductor device for protecting an electrostatic discharge and a method of fabricating the same, a gate electrode is disposed on a semiconductor substrate of first conductivity type, and a heavily doped region and a vertical lightly doped region surround the heavily doped region. The heavily doped region and vertical lightly doped region have a second conductivity type and are disposed in the semiconductor substrate on both sides of the gate electrode. The vertical lightly doped region has a lower impurity concentration and a larger depth than the heavily doped regions. A horizontal lightly doped region, which has a lower impurity concentration than the vertical lightly doped region, is further disposed in an upper side of the vertical lightly doped region. The method comprises forming a gate electrode on a semiconductor substrate of first conductivity type, forming a heavily doped region of second conductivity type in the semiconductor substrate beside the gate electrode, and forming a vertical lightly doped region of second conductivity type surrounding the heavily doped region. The vertical lightly doped region is formed to have a lower impurity concentration and a larger depth than the heavily doped region.
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申请公布号 |
US6835624(B2) |
申请公布日期 |
2004.12.28 |
申请号 |
US20030384833 |
申请日期 |
2003.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PONG WON-HYUNG;PARK HYUNG-RAE |
分类号 |
H01L27/04;H01L21/336;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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