DEVICE AND METHOD FOR MEASURING EXACTLY RELIABILITY OF GATE OXIDE LAYER USING HARD MASK WITH MEASUREMENT HOLE

摘要

PURPOSE: A device and a method for measuring reliability of a gate oxide layer are provided to exactly measure the reliability of the gate oxide layer by forming a hard mask with a measurement hole on a gate stack. CONSTITUTION: A gate oxide layer(31), a gate stacked structure(32) and an insulating layer as a hard mask(33) are sequentially stacked on a semiconductor substrate(30). A measurement hole(PH) for measuring reliability of the gate oxide layer is formed in the hard mask to expose the gate stacked structure. A spacer(34) is formed at both sidewalls of the gate stacked structure. The CET(Capacitance Equivalent Thickness) of the gate oxide layer is 55Å.