Protection device and related fabrication methods

摘要

Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base region of semiconductor material having a first conductivity type, a second base region of semiconductor material having the first conductivity type and a dopant concentration that is less than the first base region, a third base region of semiconductor material having the first conductivity type and a dopant concentration that is greater than the second base region, an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type within the first base region, and a collector region of semiconductor material having the second conductivity type. At least a portion of the second base region resides between the third base region and the first base region and at least a portion of the first base region resides between the emitter region and the collector region.

主权项

1. A semiconductor device comprising:
a first region of semiconductor material having a first conductivity type and a first dopant concentration; a second region of semiconductor material having the first conductivity type and a second dopant concentration that is less than the first dopant concentration; a third region of semiconductor material having the first conductivity type and a third dopant concentration that is greater than the second dopant concentration, wherein at least an intervening portion of the second region is disposed laterally between the third region and the first region; a fourth region of semiconductor material within the first region, the fourth region having a second conductivity type opposite the first conductivity type; and a fifth region of semiconductor material having the second conductivity type, wherein:
at least a portion of the first region is disposed between the fourth region and the fifth region; andthe third region and the fourth region are electrically shorted together.