| 摘要 |
PURPOSE: To provide a method for depositing a film of metal chalcogenide to prepare a film of a metal chalcogenide semiconducting material having an advantage of being low cost, a method for a separated hydrazinium-based precursor of metal chalcogenide, and a field-effect thin film transistor device including the metal chalcogenide as a channel layer. CONSTITUTION: The method for depositing a film of metal chalcogenide comprises a step of forming a complex solution of the precursor by contacting a separated hydrazinium-based precursor of metal chalcogenide with a solvent in which a soluble additive is retained; a step of coating the complex solution on a substrate so that a coating of the solution is formed on the substrate; a step of forming a film of the complex on the substrate by removing the solvent from the coating; and a step of annealing the complex film so that a metal chalcogenide film is formed on the substrate. The method for preparing a separated hydrazinium-based precursor of metal chalcogenide comprises a step of preparing an ammonium-based precursor of the metal chalcogenides by contacting one or more metal chalcogenides, an amine compound represented by the following formula: NR¬5R¬6R¬7, wherein each of R¬5, R¬6 and R¬7 is independently selected from the group consisting of hydrogen, aryl, methyl, ethyl and linear, branched or cyclic alkyl having 3 to 6 carbon atoms, and a salt of H2S, H2Se or H2Te; a step of preparing a solution of hydrazinium-based precursor of the metal chalcogenides by contacting the ammonium-based precursor of the metal chalcogenides, a hydrazine compound represented by the following formula: R¬1R¬2N-NR¬3R¬4, wherein each of R¬1, R¬2, R¬3 and R¬4 is independently selected from the group consisting of hydrogen, aryl, methyl, ethyl and linear, branched or cyclic alkyl having 3 to 6 carbon atoms, and optionally, an elemental chalcogen selected from the group consisting of S, Se, Te and a combination thereof; and a step of separating the hydrazinium-based precursor of the metal chalcogenides into a substantially pure product.
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