METHOD OF FORMING VIA HOLE OF SEMICONDUCTOR DEVICE FOR PREVENTING DETERIORATION OF CAPACITOR AND LOSS OF BIT LINE

摘要

PURPOSE: A method of forming a via hole of a semiconductor device is provided to prevent loss of a bit line by blocking exposure of the bit line in a tungsten hardmask removal process. CONSTITUTION: An interlayer dielectric(30) is formed on a semiconductor substrate(10) having a bit line(20). A tungsten hardmask layer is formed on the interlayer dielectric. A photoresist pattern is formed on the tungsten hardmask layer in order to form a via hole. The tungsten hardmask layer is etched along the photoresist pattern. The photoresist pattern is removed therefrom. A via hole is formed by etching the interlayer dielectric in order to expose the bit line. A buried layer is formed within the via hole in order to shield the exposed bit line. The tungsten hardmask layer is removed therefrom. The buried layer is removed therefrom.