| 摘要 |
PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to remove selectively a liner nitride layer from a sidewall of a trench of a peripheral circuit region by performing a tilt etch process. CONSTITUTION: A pad oxide layer and a pad nitride layer are formed on a silicon substrate(21) having a cell region and a peripheral region. A first trench and a second trench are formed on the cell region and the peripheral region, respectively. A sidewall oxide layer(25) is formed on each surface of the first and second trenches. A liner nitride layer(26) is deposited on the sidewall oxide layer and the pad nitride layer. The liner nitride layer is selectively removed from the sidewall of the trench of the peripheral circuit region by performing an anisotropic-etch process for the semiconductor substrate of the tilted state. The first and second trenches are buried with an oxide layer. A CMP process is performed to expose the pad nitride layer. The pad nitride layer and the pad oxide layer are removed therefrom.
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