METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH STABLE SILICIDE LAYER ON MINIMUM INTERVAL PORTION BETWEEN POLY GATES FOR IMPROVING DESIGN RULE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve a design rule by forming stably a silicide layer on a minimum interval portion between poly gates. CONSTITUTION: A gate oxide layer(106) and a gate electrode(108) are sequentially formed on a silicon substrate(100). A first oxide spacer(110), a nitride spacer(112) and a second oxide spacer(114) are sequentially formed at both sidewalls of the gate electrode. A first N+ source/drain ion-implantation is performed on the resultant structure by using an N+ source/drain mask. The second oxide spacer is removed by performing etching using a diluted BOE(Buffered Oxide Etchant) under the same N+ source/drain mask condition, so that a stable silicide layer is capable of being formed thereon.