METHOD FOR PRODUCING SINGLE CRYSTAL SILICON WAFER AND SILICON ON INSULATOR WAFER HAVING CONSTANT RESISTIVITY AND UNIFORM ACTIVE LAYER

摘要

PURPOSE: A method for producing a single crystal silicon wafer and a silicon on insulator wafer(SOI) is provided to have the constant resistivity and a uniform active layer by heat treatment in 100% Ar. CONSTITUTION: A boron attached to the surface of a single crystal silicon wafer(10) is removed by removing a native oxide through a heat treatment in a 100% H2 atmosphere. The single crystal silicon wafer passed through the heat treatment is heat-treated in 100% Ar atmosphere. The heat treatment in a 100% H2 atmosphere is performed for 1 to 30 minutes at a temperature of 850 to 1150°C. The heat-treatment in 100% Ar atmosphere is performed for 30 minutes to 2 hours at a temperature of at least 1200°C.