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发明名称
HIGH POWER CSP AND FABRICATING METHOD THEREOF TO IMPROVE HEAT RADIATION CHARACTERISTIC OF CSP AND ADHESION OF METAL SUBSTRATE AND SEMICONDUCTOR CHIP
摘要
申请公布号
KR100475337(B1)
申请公布日期
2005.02.25
申请号
KR19970047428
申请日期
1997.09.13
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHO, TAE JE;AHN, EUN CHEOL;LEE, YEONG MIN
分类号
H01L23/48;(IPC1-7):H01L23/48
主分类号
H01L23/48
代理机构
代理人
主权项
地址
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