| 摘要 |
A polysilicon thin film transistor and a method for fabricating the thin film transistor are provided to successfully crystallize an active region formed on a gate electrode by forming a gate line and the gate electrode in different thicknesses. A polysilicon thin film transistor includes a gate metal pattern forming a gate electrode(220) and a gate line(211), a gate insulating layer(218) formed on the gate metal pattern, and a polysilicon layer(216) including an active layer, an LDD(Lightly Doped Drain) region, a source region and a drain region. The polysilicon layer is formed on a portion of the gate insulating layer, which corresponds to the gate electrode. The gate metal pattern has a stepped portion. The polysilicon thin film transistor further includes source and drain electrodes respectively connected to the source and drain regions, and a pixel electrode(234) connected to the drain electrode. |
