| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the occurrence of cracks and junction failures of an interlayer insulating film at a metal pad lower layer, as the inconvenience causing problems, when a low dielectric interlayer insulating film is employed, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device comprises low elastic modulus interlayer insulating films 3, 7, 11, 15, 19, each having an opening part provided below a metal pad 22; non-low elastic modulus interlayer insulating films 5, 6, 9, 10, 13, 14, 17, 18, each having a larger elastic modulus than those of the low elastic modulus interlayer insulating films, and stacked sequentially at the opening part and around it so as to contact the low-elasticity modulus interlayer insulating films; and metal wiring layers 4, 8, 12, 16, 20 each disposed to contact the non-low elasticity modulus interlayer insulating films, and to embed the opening part in the low elastic modulus interlayer insulating films under the metal pad. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
