发明名称 |
ILLUMINATION METHOD GENERATING PROXIMITY FIELD LIGHT, PROXIMITY FIELD EXPOSURE METHOD, AND PROXIMITY FIELD EXPOSURE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an illumination method generating a proximity field light capable of reaching a deep point of resist to form a deep resist pattern, and to provide a proximity field exposure method and a proximity field exposure device. <P>SOLUTION: In the illumination method generating a proximity field light by projecting an irradiation light 210 to a mask 201 having a mask pattern of micro openings not larger than the wavelength size on a mask base material, i.e. a transparent substrate, an illumination means generating the proximity field light is arranged to illuminate the boundary surface of the transparent substrate and the mask pattern with the irradiation light obliquely from the transparent substrate side. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005093474(A) |
申请公布日期 |
2005.04.07 |
申请号 |
JP20030320751 |
申请日期 |
2003.09.12 |
申请人 |
CANON INC |
发明人 |
MIZUTANI NATSUHIKO;YAMADA TOMOHIRO |
分类号 |
G03F7/20;G11B7/135;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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