Fin field effect transistors having conformal oxide layers and methods of forming same

摘要

An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.

主权项

1. A method for forming a semiconductor device comprising a first fin field effect transistor (finFET), the method comprising:
forming a first semiconductor fin comprising a first channel region for the first finFET; selecting a first maximum thickness variation for a first gate oxide in accordance with a first operating voltage of the first finFET; and forming the first gate oxide on a sidewall and a top surface of the first channel region, wherein the first gate oxide comprises a first thickness variation less than the first maximum thickness variation, wherein the first thickness variation is defined as a difference in thicknesses between a first thinnest portion of the first gate oxide and a first thickest portion of the first gate oxide.