FinFET device and fabrication method thereof

摘要

A method for forming a FinFET device is provided. The method includes providing a substrate having a first region and a second region; and forming a plurality of fins on the substrate. The method also includes forming a plurality of doping regions with different doping concentrations in the fins in the first region; and forming a plurality of dummy gate structures over the plurality of fins. Further, the method includes forming source and drain regions in the plurality of fins at both sides of the dummy gate structures; and removing the dummy gate structures to form a plurality of openings to expose the plurality of fins. Further, the method also includes forming a plurality of work function layers with different work functions on the exposed fins in the openings in the second region; and forming gate structures in the openings.

主权项

1. A method for fabricating a semiconductor structure, comprising:
providing a substrate having a first region and a second region; forming a plurality of fins on the substrate; forming a plurality of doping regions with different doping concentrations in the fins in the first region; forming a plurality of dummy gate structures over the plurality of fins; forming source and drain regions in the plurality of fins at both sides of the dummy gate structures; removing the dummy gate structures to form a plurality of openings to expose the plurality of fins; forming a plurality of work function layers with different work functions on the exposed fins in the openings in the second region; and forming gate structures in the openings.