发明名称 |
Supply power dependent controllable write throughput for memory applications |
摘要 |
Techniques that allow dynamic management of throughput in a memory device based on a power supply voltage are provided. In an example embodiment, a method of operating a memory device comprises monitoring on the power supply level applied to the device and determining a corresponding number of bitlines that the device can activate at the same time, generating a control signal based on the number of bitlines, and using the control signal to activate a portion of the memory device corresponding to the determined number of bitlines. |
申请公布号 |
US9514833(B2) |
申请公布日期 |
2016.12.06 |
申请号 |
US201514930484 |
申请日期 |
2015.11.02 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
Binboga Evrim |
分类号 |
G11C5/14;G11C16/30;G11C16/14 |
主分类号 |
G11C5/14 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
monitoring a power supply; determining a power supply level; determining a first number of bitlines which a memory device can activate at a time based on the power supply level; generating a control signal based on the first number of bitlines; and activating a portion of the memory device corresponding to the first number of bitlines with a driver circuit in response to the control signal. |
地址 |
San Jose CA US |