发明名称 Supply power dependent controllable write throughput for memory applications
摘要 Techniques that allow dynamic management of throughput in a memory device based on a power supply voltage are provided. In an example embodiment, a method of operating a memory device comprises monitoring on the power supply level applied to the device and determining a corresponding number of bitlines that the device can activate at the same time, generating a control signal based on the number of bitlines, and using the control signal to activate a portion of the memory device corresponding to the determined number of bitlines.
申请公布号 US9514833(B2) 申请公布日期 2016.12.06
申请号 US201514930484 申请日期 2015.11.02
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 Binboga Evrim
分类号 G11C5/14;G11C16/30;G11C16/14 主分类号 G11C5/14
代理机构 代理人
主权项 1. A method comprising: monitoring a power supply; determining a power supply level; determining a first number of bitlines which a memory device can activate at a time based on the power supply level; generating a control signal based on the first number of bitlines; and activating a portion of the memory device corresponding to the first number of bitlines with a driver circuit in response to the control signal.
地址 San Jose CA US