| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode whose variation of optical output strength is small during charging of current, and that is superior in optical output strength and reverse voltage characteristic, as well as its manufacturing method. <P>SOLUTION: The light emitting diode is formed by bonding a p-clad layer 5, a p-type active layer 6, and an n-clad layer 7. The p-type active layer 6 is added with both either of a 2A group element and a 2B group element and a 4 group element as a dopant by a specified quantity thereof, respectively. The specified quantity is set so that an effective acceptor concentration may become 1×10<SP>17</SP>to 2×10<SP>18</SP>cm<SP>-3</SP>when the p-type active layer 6 is added with only either of the 2A group element and the 2B group element. In addition, the specified quantity is set so that an effective acceptor concentration may become 1×10<SP>18</SP>to 2×10<SP>19</SP>cm<SP>-3</SP>when the p-type active layer 5 is added with the 4 group element only. Thus, each dopant effect is overlapped, so that the variation of optical output strength can be suppressed and the reverse voltage and optical output strength be improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
