FLIP-CHIP GALLIUM-NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF FABRICATING SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of fabricating a flip-chip gallium-nitride-based semiconductor light-emitting element having solder-coated electrodes, capable of downsizing a chip size.

SOLUTION: The fabrication method comprises steps of: forming a positive electrode of metal on the surface of a p-type semiconductor layer of a gallium-nitride-based semiconductor light-emitting element made up of n-type semiconductor layers and p-type semiconductor layers stacked alternately one by one on a substrate; then conferring adherence to a prescribed region of the surface of the positive electrode by reacting the prescribed region of the surface of the positive electrode and a composition containing an adherence-conferring compound; attaching solder powder exclusively on the adherence-conferred region; then heating and melting the solder power; and forming a solder layer on the prescribed region of the surface of the positive electrode.

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