发明名称 ORGANIC THIN FILM TRANSISTOR WITH SILOXANE POLYMER INTERFACE
摘要 <p>Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.</p>
申请公布号 KR20050039730(A) 申请公布日期 2005.04.29
申请号 KR20047006753 申请日期 2004.05.04
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 BOARDMAN, LARRY, D.;DUNBAR, TIMOTHY, D.;JONES, TODD, D.;KELLEY, TOMMIE, W.;MUYRES, DAWN, V.;PELLERITE, MARK, J.;SMITH, TERRANCE, P.
分类号 H01L51/05;H01L21/312;H01L21/316;H01L29/786;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L51/20 主分类号 H01L51/05
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