发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which is excellent in heat dissipation property and insulation property. <P>SOLUTION: The manufacturing method of a semiconductor device wherein a chip is subjected to resin mold has a process for preparing a frame with a front surface and a rear surface having a die pad, a process for preparing an insulating resin sheet with a first surface and a second surface, a process for preparing a resin sealing mold with a press pin, a process for mounting a resin sheet inside a resin sealing mold so that a second surface of the resin sheet comes into contact with the inner bottom surface of the resin sealing mold, a process for mounting a power chip on the surface of the die pad, a process for arranging a frame on the first surface of the resin sheet so that the rear surface of the die pad comes into contact with a first surface of the resin sheet, a process for fixing the die pad by pressing the die pad toward the resin sheet by the press pin, a process for putting the sealing resin in the resin sealing mold and hardening it, and a process for unloading the semiconductor device from the resin sealing mold. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123495(A) 申请公布日期 2005.05.12
申请号 JP20030358815 申请日期 2003.10.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAYASHI KENICHI;KAWATO HISASHI;TAKESHITA TATSUYUKI;FUNAKOSHI NOBUHITO;OZAKI HIROYUKI
分类号 H01L25/18;H01L21/56;H01L23/28;H01L23/29;H01L23/433;H01L23/495;H01L25/04 主分类号 H01L25/18
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